In depth study of the compensation in annealed heavily carbon doped GaAs

Journal article

Peer reviewed

A Rebev, W Fathallah, B EL JANI and A. Rebey

Microelectronics journal, Vol.37(2), pp.158-166

01/02/2006

Abstract

Applied sciences

Electronics

Exact sciences and technology

General

Instruments, apparatus, components and techniques common to several branches of physics and astronomy

Microelectronic fabrication (materials and surfaces technology)

Physics

Scanning probe microscopes, components and techniques

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: In depth study of the compensation in annealed heavily carbon doped GaAs
Creators - without role: A Rebev - Faculté des Sciences, Unité de Recherche sur l'Hétéroépitaxie et Applications, 5000 Monastir, Tunisia
W Fathallah - University of Monastir
B EL JANI - University of Monastir
A. Rebey - Qassim University
Publication Details: Microelectronics journal, Vol.37(2), pp.158-166
Publisher: Elsevier Science
Identifiers: 9929055408331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article