In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs

Journal article

Peer reviewed

A Rebey, B EL JANI, A Leycuras, S Laugt and P Gibart

Applied physics. A, Materials science & processing, Vol.68(3), pp.349-352

01/03/1999

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of deposition of films and coatings; film growth and epitaxy

Physics

Vapor phase epitaxy; growth from vapor phase

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Title: In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs
Creators - without role: A Rebey - Laboratoire de physique des matériaux 5000 Monastir, Tunisia, TN
B EL JANI - Laboratoire de physique des matériaux 5000 Monastir, Tunisia, TN
A Leycuras - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
S Laugt - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
P Gibart - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications
Publication Details: Applied physics. A, Materials science & processing, Vol.68(3), pp.349-352
Publisher: Springer
Identifiers: 9928443008331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article