InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Journal article

Peer reviewed

H. Khmissi, K. Naji, M. H. Hadj Alouane, Nicolas Chauvin, C. Bru-Chevallier, B. Ilahi, G. Patriarche and M. Gendry

Journal of crystal growth, Vol.344(1), pp.45-50

01/04/2012

Abstract

Condensed Matter

Materials Science

Physics

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Title: InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
Creators - without role: H. Khmissi - University of Monastir
K. Naji - Institut des Nanotechnologies de Lyon
M. H. Hadj Alouane - INL - Spectroscopies et Nanomatériaux
Nicolas Chauvin - Institut des Nanotechnologies de Lyon
C. Bru-Chevallier - Institut des Nanotechnologies de Lyon
B. Ilahi - University of Monastir
G. Patriarche - Laboratoire Photonique, Numérique et Nanosciences
M. Gendry - École Centrale de Lyon
Publication Details: Journal of crystal growth, Vol.344(1), pp.45-50
Publisher: Elsevier
Identifiers: 9919261108331
Academic Unit: Northern Borders University
Language: English
Resource Type: Journal article