Abstract
The intermixing of InGaAs/GaAs quantum dot using isoelectric ion implantation followed by rapid thermal annealing is presented. The implantation was carried out at 200
°C with arsenic (As
+) and phosphorus (P
+) ions, at various doses, where the ions were accelerated at 360
keV with the ion angle tilted by 7°. Compared with impurity-free induced intermixing, the intermixing degree is significantly enhanced by temperature-assisted implantation followed by a rapid thermal annealing below 750
°C. The diffusion transient was observed at a longer annealing duration suggesting the complete intermixing of the implantation-induced damage. A blue shift as large as 126
meV has been observed from the P
+-implanted sample, whilst only ∼14
meV has been measured from the Si
x
N
y
-capped sample after annealing at 750
°C. The result indicates that a highly selective and low-temperature spatial intermixing, which has a strong potential for photonic integration, could be developed.