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InGaAs/GaAs quantum-dot superluminescent diode for optical sensor and imaging
Journal article   Peer reviewed

InGaAs/GaAs quantum-dot superluminescent diode for optical sensor and imaging

Hery Susanto Djie, Clara E. Dimas, Dong-Ning Wang, Boon-Siew Ooi, James C. M. Hwang, Gerard T. Dang and Wayne H. Chang
IEEE sensors journal, Vol.7(1-2), pp.251-257
01/02/2007
DOI: https://doi.org/10.1109/JSEN.2006.886884

Abstract

Engineering Engineering, Electrical & Electronic Instruments & Instrumentation Physical Sciences Physics Physics, Applied Science & Technology Technology
We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured.

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