Abstract
Molecular engineering of organic semiconductors provides a virtually unlimited number of possible structures, yet only a handful of combinations lead to state-of-the-art efficiencies in photovoltaic applications. Thus, design rules that guide material development are needed. One such design principle is that in a bulk heterojunction consisting of an electron donor and lower bandgap acceptor an offset (Delta IE) of at least 0.45 eV is required between both materials ionization energies to overcome energy level bending at the donor-acceptor interface, in turn maximizing the charge separation yield and the cell's internal quantum efficiency. The present work studies energy losses associated with Delta IE and, based on 24 blends, finds that losses are minimal up to a Delta IE of 0.6 eV. Electroluminescence spectroscopy shows that low energy losses are achieved when the charge transfer state energy (E-CT) is similar to the acceptor's optical bandgap (E-g(A)). Further Delta IE increase lowers E-CT with respect to E-g(A), thus decreasing V-OC. Within that 0.45-0.6 eV Delta IE sweet range, the fill factor FF, hence the power conversion efficiency, increases only marginally as the FF is often already close to maximal for Delta IE = 0.45 eV. The results are extended to 76 binary and ternary blends.