Abstract
Thermoelectric solid solutions of Bi-2 (Te1-xSex)(3) with x = 0, 0.2, 0.4, 0.6, 0.8 and 1 were grown using the Bridgman technique. Thin films of these materials of different compositions were prepared by conventional thermal evaporation of the prepared bulk materials. The temperature dependence of the electrical conductivity sigma, free carriers concentration n, mobility mu(H). and seebeck coefficient S. of the as-deposited and films annealed at different temperatures, have been studied at temperature ranging from 300 to 500 K. The temperature dependence of a revealed an intrinsic conduction mechanism above 400 K, while for temperatures less than 400 K an extrinsic conduction is dominant.
The activation energy, Delta E, and the energy gap, E-g, were found to increase with increasing Se content. The variation of S with temperature revealed that the samples with different compositions x are degenerate semiconductors with n-type conduction. Both, the annealing and composition effects on Hall constant, R-H, density of electron carriers, n, Hall mobility, mu(H), and the effective mass, m*/m(0) are studied in the above temperature range. (C) 2010 Elsevier Ltd. All rights reserved.