Abstract
Formamidinium lead bromide films doped with 5-Ammonium Valeric Acid Bromide, (FA)1-x(AVABr)xPbBr3 (0 ≤ x ≤ 0.25), were prepared using the spin coating method. X-ray diffraction analysis revealed that the percentage of α-FAPbBr3 to δ-FAPbBr3 phases is dependent on the amount of AVABr. The effect of increasing the concentration of AVABr in the formed film on the absorption band edge, absorbance, reflection, transmittance, absorption coefficient, extinction coefficient, refractive index, (real and imaginary) parts of the dielectric constant, (surface and volume) energy loss functions, (optical and electric) conductivities, and non-linear optical parameters (NLO) behaviors was studied in detail. All films displayed a limited reflection in the visible range (under 18%). The transmittance of the films doped with 5 and 10% AVABr became 83 and 85% as compared with the FAPbBr3 film (72%) at 600 nm. The optical band gap changed slightly between 2.26 and 2.29 eV depending on the amount of AVABr in the film. The high values of σopt and σele for the films doped with 5 and 10% AVABr are good indicators for the possible application of both films in optoelectronic applications. Films containing 5 and 10% AVABr have the highest NLO values. All films exhibited a single asymmetry peak located in the green emission range (542–549 nm).
•The absorbance of the FAPbBr3 film in the visible range was increased.•In the visible and higher wavelength ranges, n values increased as the amount of AVABr became 5 and 10%.•Films containing 5 and 10% AVABr have the highest σele.•The FWHM of the PL spectrum of the film became narrower as it was doped with 5% AVABr.•10% AVABr film may be useful in fast optical switching, optical limiting, and high-speed communication applications.