Abstract
This article discusses influence of the annealing temperature on the structural, optical and electrical properties of indium oxide thin films which are prepared on glass substrate heated at 150°C by ultrasonic spray technique using indium chloride as precursor solution. The deposited samples annealed at 300°C and 500°C for 1h. Structural analysis of these films suggest that the films are polycrystalline with a preferred grain orientation along the (222) plane, and the crystalline state of these films improve with the increase in the annealing temperature from 300°C to 500°C. The optical band gap is varied in the range of 3.64–3.73ev. UV–vis spectroscopy show that the average transmittance is about 85% in the visible region, and the optical transmittance decrease with the increase of the annealing temperature. The electrical resistivity decreases from 80Ωcm to 9.8×10−3Ωcm with the increase of the annealing temperature from 300°C to 500°C.