Abstract
Tin-doped In2S3 films were grown by the chemical spray pyrolysis method using compressed air as a carrier gas. The films were annealed for 2 h at different temperatures (300, 400 and 500 degrees C) under nitrogen atmosphere. X-ray diffraction data show that In2S3: Sn films are polycrystalline with a cubic phase. The film grain size increases from 26 to 37 nm. The residual microstrain and dislocation network reach the values 3.08 x 10(-3) and 0.73 x 10(11) lines cm(-2), respectively, at the annealing temperature of 500 degrees C. Transmittance decreases with increasing temperature. It varies in the range of 65-85 % in visible and infrared regions. The optical band gap is found to vary in the range 2.4-2.85 eV for direct transitions. The best surface state is obtained at 400 degrees C. The RMS roughness was estimated to be 39.4-19.8 nm. Electrical measurements at room temperature show that the sheet resistance decreases down to 130 Omega at 500 degrees C. The conductance and capacitance characterization at ambient temperature are also investigated and give interesting physical properties for photovoltaic applications.