Abstract
We present in this article a self-consistent study for calculating the subbands structure of doped AlGaN/GaN double quantum wells. We calculate the electronic properties as function as various structural parameters such as aluminum composition, and doping layer concentration ND. It is found that the resonance between the first subband and the second one occurs when the concentration of the doped layer is around (ND=10ÿ1016cm⿿3). The oscillatory strength between the first and second subbands F12 intercepts that of the F13 provided that the doping layer concentration is equal to ND=10ÿ1016cm⿿3. These results suggest promising applications to devices operating within the optical communication wavelength range.