Abstract
Solution curves of the complete set of transport, continuity and Poisson equations for a two-carrier model of n-i-p junctions in CdS/CuInSe sub(2) and amorphous silicon (a-Si) are discussed for various degrees of compensation in the i layer. The solar cell performance is discussed in relation to the set of computed principal and derived variables, such as carrier densities, fields, potentials and currents. The resulting current-voltage characteristics show typical deviation from ideal characteristics, revealing the degree of drift-assisted carrier collection.