Abstract
Thin films of lead sulfide (PbS) were prepared on glass substrates using the successive ionic layer adsorption and reaction technique. To investigate the gamma-induced properties, the deposited thin films were sequentially exposed to 60Co gamma rays at doses varying from 0 to 75 kGy. X-ray diffraction analysis of the pristine and irradiated samples showed that the crystallinity of the PbS thin films increased with the gamma dose. Field-emission scanning electron microscopy revealed that the PbS particle size increased with the gamma dose up to 25 kGy, and then decreased. Defect peaks at 805.54 and 833.89 nm were found in the photoluminescence spectra of the pristine samples that were annihilated owing to the gamma exposure. Impedance spectroscopy indicated that the radiation effect increased the grain resistance as the dose level was increased. The noticeable changes induced in the structural, optical, and electrical properties of the PbS thin films clearly introduce the possibility of using them in gamma dosimetry application.
•Gamma irradiation effects on the PbS thin films were studied.•X-ray diffraction irradiated samples showed the crystallinity of the PbS thin films film is enhanced up to certain doses level.•Impedance spectroscopy exhibited the grain resistance increases by increasing the dose level of gamma exposed.