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- Title
- Influence of quantum confined Stark effect and carrier localization effect on modulation bandwidth for GaN-based LEDs
- Creators - without role
- Shichao Zhu - Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, ChinaShan Lin - University of Chinese Academy of SciencesJing Li - Institute of SemiconductorsZhiguo Yu - Institute of SemiconductorsHaicheng Cao - Chinese Academy of SciencesChao Yang - Institute of SemiconductorsJinmin Li - Institute of SemiconductorsLixia Zhao - University of Chinese Academy of Sciences
- Publication Details
- Applied physics letters, Vol.111(17), p.171105
- Identifiers
- 9942584808331
- Academic Unit
- King Abdullah University of Science & Technology
- Language
- English
- Resource Type
- Journal article