Abstract
The interfacial properties of high-
k
dielectric
Ca
Zr
O
x
thin films deposited by pulsed laser deposition in
O
2
and
N
2
ambient are investigated. The
Si
O
x
(
x
<
2
)
interfacial layer is observed for the films deposited at
300
°
C
in
20
Pa
O
2
. Rapid thermal annealing (RTA) of the films at
700
°
C
in
N
2
for
10
s
allows for oxidization of the interfacial layers into
Si
O
2
and decomposition of the films into nano-
Zr
O
2
crystals embedded in the matrix of amorphous CaO-rich zirconate. However, by the same RTA, the films deposited at
300
°
C
in
20
Pa
N
2
remain amorphous with clean
Si
∕
Ca
Zr
O
x
interface and exhibit good electrical performances.