Abstract
•An infrared detector based on (CdS)/ZnSe)/BeTe quantum wells is modeled.•The intersubband absorption, the dark current and the quantum efficiency are reported.•The low dark current at 300K reveals the good performance of the QWIP.•The detectivity curves confirm its good quality at 3.3μm wavelength.
A study of intersubband transitions in quantum well infrared detectors working at high temperatures has been reported. This study allows a greater tunability in the device designs, with the ability to control the peak wavelength, the absorption coefficient, the dark current, the quantum efficiency and the detectivity of the modeled structure operating around 3.3μm wavelength. The detection energy and absorption coefficient dependences with an applied electric field are given. Then, the electro-optic performances of the modeled mid-infrared detector are estimated, the dark current dependence with the applied voltage and temperature as well as the quantum efficiency and the detectivity are investigated and discussed. High detectivities were found at high temperatures revealing the good performances of the designed photodetector, especially at 3.3μm wavelength.