Abstract
Power switching loss estimation for fast power semiconductor devices requires probe inverse models. Simple corrections of the delay introduced by the probe cables improve the measured waveform, but they are not sufficient. Prior to the construction of the probe inverse models, the authors introduce direct models. Particularly, the classical $RLC$ equivalent circuit reveals a poor model. The "traveling wave," i.e., Bergeron's approaches, is introduced, which leads to convenient probe inverse models. The validation is obtained between experimental results and simulation.