Abstract
This paper presents an investigation of ultrathin Cu (In1-xGax) Se-2 solar cell which was calibrated from the fabricated cell using Silvaco-TCAD tools. Carrier transport mechanism and conduction band alignment at the CdS/CIGS interface shows a large influence on PV parameters. The influence of the absorber trap density on the electrical characteristics of the single junction cell was investigated under AM 1.5G one-sun (100 mW/cm(2)) illumination. Further simulations quantify significant improvements in cell efficiency while using a thin Al2O3 material as a rear passivation layer. In addition, the impact of the backside pitch size, opening width, absorber layer doping, and thickness on cell performance is investigated to enhance the cell efficiency. To evaluate our work, the electrical characteristics of the optimized cell were compared to the fabricated cells.