Abstract
Recently, there is a rapid trend to incorporate low cost solar cells in photovoltaic technology. In this regard, low-cost high-doped Silicon wafers are beneficial; however, the high doping effects encountered in these wafers render their practical use in fabrication. The npn solar cell microstructure has been found to avoid this issue by the proper design of vertical generation and lateral collection of the light generated carriers. We report on the impact of the p + base doping concentration, up to 2\times 10^{19} cm −3 , on the npn microstructure performance to find the most appropriate way for high efficiency. To optimize the structure, a series of design steps has been applied using our previously published analytical model. Before inspecting the high doped base effect, firstly, the n + emitter is optimized. Secondly, the impact of bulk recombination inside the p + base is introduced showing the range of optimum base width ( W_{p} ). Then, we investigate thoroughly the impact of base doping levels for different base widths to get the optimum W_{p} that satisfies maximum efficiency. The results show that for p + base doping concentration ranging from 5\times 10^{17} cm −3 to 2\times 10^{19} cm −3 , the npn microstructure efficiency decreases from 15.9% to 9%, respectively. Although the efficiency is degraded considerably for higher doping levels, the structure still achieves a competitive efficiency at higher doping levels, for which its cost is greatly reduced, in comparison with thin film solar cells. Moreover, using higher doping permits lesser wafer area which could be beneficial for large area solar cells design.