Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

W.K. Cheah; W.J. Fan; S.F. Yoon; T.K. Ng; W.K. Loke; D.H. Zhang; T. Mei; R. Liu; A.T.S. Wee

doi:10.1016/j.jcrysgro.2004.12.020

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Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

Journal article

Peer reviewed

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

W.K. Cheah, W.J. Fan, S.F. Yoon, T.K. Ng, W.K. Loke, D.H. Zhang, T. Mei, R. Liu and A.T.S. Wee

Journal of crystal growth, Vol.275(3), pp.440-447

01/03/2005

DOI: https://doi.org/10.1016/j.jcrysgro.2004.12.020

Abstract

A1. High resolution X-ray diffraction

A1. Photoluminescence

A1. Secondary ion mass spectroscopy

A3. Molecular beam epitaxy

B1. GaAsN

B1. InGaAsN

The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.

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Title: Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
Creators - without role: W.K. Cheah - Nanyang Technological University
W.J. Fan - Nanyang Technological University
S.F. Yoon - Nanyang Technological University
T.K. Ng - Nanyang Technological University
W.K. Loke - Nanyang Technological University
D.H. Zhang - Nanyang Technological University
T. Mei - Nanyang Technological University
R. Liu - Duke-NUS Medical School
A.T.S. Wee - Department of Physics, National University of Singapore, 2 Science Drive 3 Road, Singapore 117542, Singapore
Publication Details: Journal of crystal growth, Vol.275(3), pp.440-447
Publisher: Elsevier B.V
Identifiers: 9943767208331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article