Investigation of Self-Heating Effects in a 10-nm SOI-MOSFET With an Insulator Region Using Electrothermal Modeling

Journal article

Peer reviewed

IEEE transactions on electron devices, Vol.62(8), pp.2410-2415

01/08/2015

Abstract

Electronics

Engineering Sciences

1 Record Views

Title: Investigation of Self-Heating Effects in a 10-nm SOI-MOSFET With an Insulator Region Using Electrothermal Modeling
Creators - without role: Irina Graur - Aix-Marseille University
Hafedh Belmabrouk - Majmaah University
Publication Details: IEEE transactions on electron devices, Vol.62(8), pp.2410-2415
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9918024508331
Academic Unit: Majmaah University
Language: English
Resource Type: Journal article