Abstract
In this paper, Quantum dots intermediate band solar cell (QDIBSC) is used to the enhancement of the power conversion efficiency of solar cell. The main advantage of this type is that it preserves large open-circuit voltage with increasing the produced photocurrent in the solar cell. For a best efficiency of one-intermediate band solar cell (one-IBSC), the induced detailed balance efficiency is determined as a function of changing locations of intermediate-band (IB) by using the blackbody. The QDs have the ability to confirm the chosen higher efficiency by assigning the appropriate values of quantum dot width size (QDW) and barrier thickness (BT). It means that the best location of IB in solar cell is realized. The results show that to obtain the maximum power conversion efficiency of QDIBSC, the QDWs and BTs for nanostructured model (Al0.4Ga0.6As/In0.42Ga0.58As) are limited by a surface contour. The highest power efficiencies in this located contour are 45.32% and 62.81% for QDWs = (1.60 nm, 1.64 nm) and BTs = (1.98 nm, 1.94 nm) for 1 sun and maximum light concentrations; respectively.