Abstract
Existence of defect levels into the band gap of titanium oxide (TiO2) due to indium (In) doping was investigated by Deep level transition spectroscopy (DLTS), Raman Spectroscopy and photoluminescence (PL). Particularly, two distinct e-beam grown TiO2 thin film (TF) samples on Si substrates were doped using In films with thicknesses of 5 nm and 50 nm instantaneous source. It was observed that the increasing in In doping concentration has changed the TiO2 crystal structure from anatase to rutile phase. In addition, the low doped Ti/Au/5 nm In/TiO2 TF samples showed at -5 V reverse-bias lower leakage current (3.0 x 10(-7) A) as compared to the highly doped Ti/Au/50 nm In/TiO2 TF devices (7.0 x 10(-5) A). The free carrier concentration was increased from about 10(14) cm(-3) to 10(15) cm(-3) for 5 nm In/TiO2 TF to 50 nm In/TiO2 TF devices, respectively. DLTS results have revealed a unique behaviour where a substantial reduction in deep trap concentration was observed in the samples having larger In doping. A PL band around 2.4 eV and 1.9 eV was observed for 5 nm and 50 nm In/TiO2 TF samples, respectively A blue shift of photoluminescence (PL) energy peak with the increase of temperature was also observed for both samples and was associated to defect related emissions. Finally, the shallow activation energy was determined from the temperature dependence of PL spectra. It was observed that the activation energy increased from 25 meV for the low In-doped TiO2 TF samples to 65 meV for the highly In-doped TiO2 TFs. (C) 2016 Elsevier B.V. All rights reserved.