Abstract
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► CdS/n-Si device was fabricated as a heterostructure. ► AFM was used to examine the structure of CdS/n-Si. ► Complex impedance Z′and Z″were calculated. ► AC conductivity was explained by the power law relation. ► CBH model was used to describe the AC conduction mechanism.
CdS/n-Si device was fabricated via depositing CdS thin film onto pre-cleaned n-silicon substrates. The atomic force microscope was used to examine the crystal size of the deposited films and its roughness. The AC conductivity and the real part of complex impedance Z′as a function of frequency at different temperatures were studied. The AC conductivity dependence of the applied frequency was explained on the basis of the power law relation. The bulk resistance has been calculated at different temperatures from the complex impedance Z″. The temperature dependence of capacitance for CdS/n-Si device at different frequencies was also investigated.