Abstract
SnSb2S4 films were grown with different thicknesses, they subsequently thermally annealed under air atmospheres from the ambient temperature to 275 degrees C. The SnSb2S4 films exhibit a polycrystalline structure and undergo drastically changes in electrical and optical properties at a transition temperature of about 150 degrees C only for the films with thicknesses lower than 600 nm. The films show an hysteresis-like loop on accomplishing measurements of the square resistance values for the films with thicknesses higher than 600 nm. So, for the lower thicknesses this material is a good candidate as a protective material for example against high energetic laser radiation.