Investigation of porous GaAs layers formed on n+-type GaAs by electrochemical anodization in HF solution

Journal article

Peer reviewed

L. Beji, L. Sfaxi, H. BenOuada and H. Maaref

Physica status solidi. A, Applications and materials science, Vol.202(1), pp.65-71

01/2005

Abstract

61.43.Gt

68.37.Hk

78.55.Cr

78.55.Mb

82.45.Mp

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Title: Investigation of porous GaAs layers formed on n+-type GaAs by electrochemical anodization in HF solution
Creators - without role: L. Beji - University of Monastir
L. Sfaxi - University of Monastir
H. BenOuada - University of Monastir
H. Maaref - University of Monastir
Publication Details: Physica status solidi. A, Applications and materials science, Vol.202(1), pp.65-71
Publisher: WILEY-VCH Verlag
Number of pages: 7
Identifiers: 9928768408331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article