Abstract
In the present work, the spin coating technique was used to prepare the (6, 6)-Phenyl C61 butyric acid methyl ester (PCBM)/Zinc (II) octaethylporphyrin (ZnOEP) thin films by adjusting their relative ratio in blend solutions. X-ray powder diffraction (XRD) patterns assumed growth in the amorphous nature of the films with increasing PCBM concentration. Scanning electron microscopy (SEM) images clearly were showed homogeneous agglomeration. The simultaneous presence of ZnOEP and PCBM Raman modes in the Raman spectrum proved composite production. Values of the indirect-energy band gap were calculated using optical absorption measurements. The disorder in the films affected optical constants, dispersion parameters, and dielectric parameters such as dispersion energy, Ed oscillator energy Eo, plasma frequency ωp, lattice dielectric constant εL, and the carrier concentration to effective mass ratio (N/m*). The change in the charge transfer (CT) of the composite might be due to the presence of PCBM improving the nonlinear optical parameters of PCBM/ZnOEP thin films. Lastly, the dark J-V showed how changing the amount of PCBM could make the current density better. Overall, the findings for PCBM/ZnOEP thin films showed that they offer a new range of potential optoelectronic device applications.
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•XRD, SEM and Raman spectra have been used to identify the crystal structure and morphology of spin-coated PCBM/ZnOEP thin films.•Bandgap decreased with increase in refractive index with PCBM concentration.•Significant increase in nonlinear parameters.•Current-voltage (J-V) curves were used to analyse PCBM/ZnOEP thin film conduction.