Investigation of the Annihilation of Positrons in Semiconductor Compounds of GaAS, GaP and Si

E. M. Sayed; M. A. Abdoulmomen; F. Abuoelfotouh

doi:10.1109/TNS.1981.4331543

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Investigation of the Annihilation of Positrons in Semiconductor Compounds of GaAS, GaP and Si

Journal article

Peer reviewed

Investigation of the Annihilation of Positrons in Semiconductor Compounds of GaAS, GaP and Si

E. M. Sayed, M. A. Abdoulmomen and F. Abuoelfotouh

IEEE transactions on nuclear science, Vol.28(2), pp.1869-1870

01/01/1981

DOI: https://doi.org/10.1109/TNS.1981.4331543

Abstract

Conductivity

Crystals

Detectors

Gallium arsenide

Gamma ray effects

Gamma rays

Magnetic field measurement

Positrons

Tellurium

Timing

The positron annihilation method was applied to study the effect of the magnetic field on the correlation curves and the mean lifetime of the process of the two gamma rays annihilation. Samples of single crystals of GaAs, GaP/Te, GaP/U and Si were used. A decrease in the rate and a reduction of the full width at half maximum (FWHM) for the correlation curves of the annihilating gamma rays. The mean lifetime of the positrons in the different crystals studied shows change in the long companent of the lifetimes due to the presence of the magnetic field.

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Title: Investigation of the Annihilation of Positrons in Semiconductor Compounds of GaAS, GaP and Si
Creators - without role: E. M. Sayed - Riyadh Elm University
M. A. Abdoulmomen - Riyadh Elm University
F. Abuoelfotouh - Riyadh Elm University
Publication Details: IEEE transactions on nuclear science, Vol.28(2), pp.1869-1870
Publisher: IEEE
Identifiers: 9919505008331
Academic Unit: King Faisal University
Language: English
Resource Type: Journal article