Abstract
The preparation and electrical properties of a Thallium Bismuth ditelluride single crystals are reported in the present work. Measurements of the electrical conductivity and Hall coefficient were performed over a temperature range from 178-568 K. The study was carried out under vacuum. The crystals obtained had p-type conductivity with a hole concentration of 1.4 x10(10) cm(-3) at room temperature. The conductivity and Hall mobility at 300K were 5.06 x10(-6) Omega(-1)cm(-1) and 2257.53 cm(2)V(-1)s(-1) respectively. The calculated energy gap width and the ionisation energy were 0.43 eV and 0.15 eV, respectively. The variation in the charge carrier concentration versus temperature is discussed. The scattering mechanism was evaluated over the entire range of temperature. Additionally, other important parameters were estimated, such as the diffusion coefficient, the mean free time and the diffusion length of holes. These properties have not been reported to date. [F.S.Bahabri, A.T.Nagat, R. H. Al-Orainy, F. S. Shokr, S.A.Al-Gohtany and M. H. Al-Husuny. Investigation of the Electrical Transport Properties of TIBiTe2 Single Crystals. Life Sci J 2012;9(4):1531-1533] (ISSN: 1097-8135). http://www.lifesciencesite.com. 232