Abstract
In this research the electric performances of Dye Sensitized Solar Cells (DSSCs) using titanium dioxide (TiO2) photoanodesco-doped with 1% Zn & (0%, 0.5%, 1% and 1.5%) Ga has been investigated. The films of undoped and co-doped TiO2 have been deposited by sol gel dip coating technique. The structure and optical properties of pure and 1% Zn & (0%, 0.5%, 1% and 1.5%) Ga co-doped TiO2 films are investigated. XRD spectra reveal that studied films hasanatase tetragonal structure of TiO2 with a small shifting angle when the doping percentages of Zn and Gaare increased. The crystallites have an average size in the range of 11-18 nm. Calculated lattice parameters are well matched with the reported value. a-axis remains same with doping while c-axis varies with doping. UV-Vis spectroscopy results show that band gap energy (E-g) is decreased with doping. Maximum decrease in E-g is found at the doping percentage of 1% Zn and 1% Ga and value is 3.20 eV. The efficiency of realized DSSC is increased considerably compared to that using pure TiO2 photoanode. The current versus voltage (I-V) characteristics reveal that the DSSC prepared using 1% Zn & 1% Ga co-doped TiO2 layer has significantly improved parameters. This cell has a high power conversion efficiency of 4.36%, short current density of 7.24 mA/cm(2) and open circuit voltage of 0.86 V.