Abstract
InxGa1-xN/GaN solar cells are ideal candidates for use in extreme temperature applications. The conversion efficiency potential of double heterostructure solar cells was investigated at high temperatures using physical simulation. For a targeted working temperature, optimized efficiency lies in a compromise between the absorber bandgap energy determined by In composition and the band offsets at the heterointerface directly correlated with the capability for the photogenerated carriers to cross through the barrier by thermoionic emission. An optimized efficiency of 18% is obtained for an In content of 50% at 400K and decreases down to 10% for an In content of 35% at 500K. As the operating temperature goes higher, the indium content needs to be reduced in order to limit the detrimental effect of increasing intrinsic carrier concentration. The consequence is a decreasing efficiency due to the reduced covered range of the solar spectrum. In the same time, the band offsets are no more a limiting parameter, as there are reduced as the In content decreases, and as higher temperature increases the thermionic transport probability. This result shows the interest of InxGa1-xN/GaN double heterostructure design for high temperatures applications.
•Numerical simulations taking into account the temperature dependence of the main physical parameters of GaN/InGaN/GaN DHJ solar cells have been carried out for high temperature applications.•The optimized structure design is therefore primarily depending on the targeted working temperature, which firstly determines the bandgap of the absorber and consequently the resulting expected efficiency.•An optimized efficiency of 18% is obtained for an In content of 50% at 400K and decrease down to 10% for an In content of 35% at 500K