Abstract
Ion-beam induced atomic mixing of Cu/Au bilayer thin film is studied using combined electrical resistivity measurements and Rutherford backscattering spectrometry (RBS). Irradiation with 400 keV Kr+ ions having fluences ranging from 3.3 x 10 exp 15 to 7.6 x 10 exp 16 ions/cm exp 2 at room temperature is used. Ion beam mixing leads to a uniformly mixed metal alloy. The formation of Cu /Au solid solutions depends on the initial composition and on the fluence of irradiating ions. For an initial composition of Cu sub 42 Au sub 58 , a Cu-rich solid solution of composition Cu sub 72 Au sub 28 is formed after irradiation with 7.6 x 10 exp 16 ions/cm exp 2 . The kinematics of the intermixing process is also studied by in situ electrical resistivity measurements which confirmed the formation of the Cu/Au solid solutions. 12 ref.--AA