Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements

Journal article

A. J ABU EL-HAIJA, K. A AL-SALEH, N. A Halim, J. M Khalifeh and N. S Saleh

Physica status solidi. A, Applied research, Vol.107(1), pp.253-260

16/05/1988

Abstract

Applied sciences

Electronics

Exact sciences and technology

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements
Creators - without role: A. J ABU EL-HAIJA - University of Jordan
K. A AL-SALEH - University of Jordan
N. A Halim - University of Jordan
J. M Khalifeh - University of Jordan
N. S Saleh - University of Jordan
Publication Details: Physica status solidi. A, Applied research, Vol.107(1), pp.253-260
Publisher: Wiley-VCH
Identifiers: 9952192408331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article