Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes

Journal article

Peer reviewed

Andrei Ghicov, Jan M Macak, Hiroaki Tsuchiya, Julia Kunze, Volker Haeublein, Lothar Frey and Patrik Schmuki

Nano letters, Vol.6(5), pp.1080-1082

01/05/2006

Abstract

Condensed matter: structure, mechanical and thermal properties

Cross-disciplinary physics: materials science; rheology

Defects and impurities in crystals; microstructure

Doping and impurity implantation in other materials

Exact sciences and technology

Materials science

Nanoscale materials and structures: fabrication and characterization

Nanotubes

Physical radiation effects, radiation damage

Physics

Single-crystal and powder diffraction

Structure of solids and liquids; crystallography

X-ray diffraction and scattering

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Title: Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes
Creators - without role: Andrei Ghicov - Friedrich-Alexander-Universität Erlangen-Nürnberg
Jan M Macak - Friedrich-Alexander-Universität Erlangen-Nürnberg
Hiroaki Tsuchiya - Fraunhofer Institute for Integrated Systems and Device Technology
Julia Kunze - Friedrich-Alexander-Universität Erlangen-Nürnberg
Volker Haeublein - Fraunhofer Institute for Integrated Systems and Device Technology
Lothar Frey - Fraunhofer Institute for Integrated Systems and Device Technology
Patrik Schmuki - Fraunhofer Institute for Integrated Systems and Device Technology
Publication Details: Nano letters, Vol.6(5), pp.1080-1082
Publisher: American Chemical Society
Identifiers: 9938335608331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article