Abstract
A thin bilayer film of Sb/Cu was irradiated with an Ar+ ion beam of 400 keV at room temperature, and studied using resistance measurement and RES techniques. The RES results indicated the formation of arm equilibrium stable phase of fixed stoichiometry, Cu2Sb, at the interface. The growth rate of phase thickness was initially rapid, up to a critical fluence of about 3.9 x 10(16) ions/cm(2) at which the Sb layer was consumed in the reaction, leading to a complete mixing. Comparison between the measured values of mixing rate determined from experimental measurements and those predicted from theoretical models suggests that bath radiation-enhanced diffusion and thermal-spike mechanisms contribute to the mixing process. Electrical-resistance measurements suggested a diffusional mixing mechanism, in agreement with the RES results.