Abstract
Schottky barrier diode based on composite of In
2
O
3
and Al
2
O
3
was fabricated using sol–gel spin coating method. The electrical properties of the diode were studied using current–voltage, capacitance–voltage and resistance–voltage characteristics. The non-linear I–V characteristics suggest the formation of Schottky barrier diode. The I–V characteristics of the diode were analyzed using the thermionic emission model. The electrical properties of the diode were investigated in the temperature range of 303–243 K. It was observed that the barrier height of the diode increases with increase in temperature. The capacitance of the diode was measured at various frequencies and temperatures. It was seen that the capacitance of the diode is decreased with increase in frequency. On the other hand, the capacitance was observed to increase with increasing temperature.