Abstract
Bulk sample of Ga15Se76Pb9 chalcogenide glass was prepared by melt quenching technique. The amorphous nature was verified by XRD. A study of crystallization kinetics of this glass was investigated using non-isothermal DSC measurements. The glass transition temperature and crystallization temperature of Ga15Se76Pb9 glass was determined at different heating rate of 5, 10, 15, 20 and 25 K/min. The dependence of T-g and T-c on the heating rate (beta) has been used for the determination of different crystallization parameters such as the activation energy for structural relaxation (Delta E-t) and activation energy of crystallization (Delta E-c). The area analysis of crystallization peaks were used to determine the order parameter (n) and the crystallization enthalpy (Delta H-c). The order parameter is found to be 1.18 which represent one dimensional growth from surface to inside in Ga15Se76Pb9 chalcogenide glass. The results of crystallization was discussed on the basis of different models.