Abstract
The ion beam mixing of Au thin film evaporated on silicon is investigated by measuring continuously the electrical resistivity of the sample during Kr ion irradiation. Rutherford backscattering spectra measurements with 2.0 MeV He ions are measured after beam bean irradiation. The resistivity results exhibit a tendency toward saturation and allow the determination of the critical dose corresponding to the total mixing condition. The variation in the normalized conductivity, due to the intermixed atoms as a function of the ion dose are deduced and compared with a semiempirical formula to explain the observed mixing kinetics. The mixing results are confirmed with the RBS measurements.