Abstract
In the current work, successful growth of an In-doped CdZnTe (InCZT) ingot with a bulk size of similar to 8 cm long and 2.5 cm diameter was achieved through gradient freeze process. The whole crystal ingot was cut in six small ingots (1-6), and from these, we have selected pieces 1, 2, 4, and 6, which were again cut into similar to 2 mm thickness portions (named 1-1, 1-2, 2-1, 2-2, 4-1, and 6-1) and polished for further characterization. The single phase and direction of growth was verified by X-ray diffraction analysis, which confirmed its growth along (111) plane. The excellence of the grown crystal was analyzed through high-resolution X-ray diffraction (HRXRD), which confirms that the grown crystals is quite perfect and may be used in device fabrications. The Vickers microhardness indentation studies and load dependence studies on different parts of 1-1, 1-2, 2-1, 2-2, 4-1, and 6-1 InCZT crystals are carried at different loads from 0.098 to 0.49 N. Examination of these samples reveals RISE behavior and it is explained by several models of Mayer's law, Hays-Kendall's tactic, and proportional resistance model. Also fracture toughness, brittleness index, yield strength, and elastic stiffness values are measured from indentation studies and found very much correlated with HRXRD analysis.