Large enhancement of the Hall mobility of the majority carrier in p-type Czochralski silicon after porous silicon damage : solutions for gettering efficiency improvement

Journal article

Peer reviewed

Semiconductor science and technology, Vol.22(4), pp.399-403

01/04/2007

Abstract

Applied sciences

Cross-disciplinary physics: materials science; rheology

Design. Technologies. Operation analysis. Testing

Electronics

Exact sciences and technology

Growth from melts; zone melting and refining

Integrated circuits

Materials science

Methods of crystal growth; physics of crystal growth

Microelectronic fabrication (materials and surfaces technology)

Physics

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Large enhancement of the Hall mobility of the majority carrier in p-type Czochralski silicon after porous silicon damage : solutions for gettering efficiency improvement
Creators - without role: ABDELKADER BEN JABALLAH - BP
Hatem Ezzaouia - BP
Publication Details: Semiconductor science and technology, Vol.22(4), pp.399-403
Publisher: Institute of Physics
Identifiers: 9917362608331
Academic Unit: Jazan University
Language: English
Resource Type: Journal article