Abstract
We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (lambda = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate. (C) 2014 AIP Publishing LLC.