Abstract
A novel method for fine lateral control of impurity induced disordering of AlAs/GaAs superlattice and its related experimental results are shown. The suppression of impurity induced disordering by an additional impurity was used to get fine definition of the lateral boundary between the superlattice and the disordered region. Si and Be are effective dopants for inducing disordering and suppressing it, respectively. Selective Si implantation with a patterned mask, under which Be was deposited, resulted in a clear boundary between the superlattice and the disordered region. This is because during annealing diffusion of Be suppresses the Si diffusion into the masked region.