Abstract
In this paper, we propose and simulate a lateral asymmetrically doped channel-based tunnel field-effect transistor. The impact of laterally asymmetric channel (LAC) on the performance of a Tunnel Field-effect transistor, along with a detailed comparison with a uniformly doped TFET (UD-TFET) has been studied. The proposed TFET has uniformly doped source and drain regions and the asymmetrically doped channel is realised by employing the Gaussian profile doping in the channel. The peak doping (N
C
) and the standard deviation (σ) of Gaussian doping profile used in the LAC-TFET channel are varied and their impact on the DC and AC performances is studied. It has been observed that the use of laterally asymmetric-doped channel in a TFET enhances its ON current (I
ON
), transconductance (g
m
) and the cut-off frequency (f
T
), without increasing the OFF state current. At optimum values of N
C
and σ, the I
ON
, g
m
and the f
T
are enhanced by more two order of magnitude in the LAC TFET. Hence, we propose that LAC-TFET can serve as a viable alternative to improve the DC and AC characteristics of TFETs.