Abstract
An n-i-p architecture perovskite solar cell (PSC) has been suggested and modelled employing Pb free CH3NH3SnI3 absorber layer. A relative investigation for WO3 (ETL) and Mg-CuCrO2 (HTL) with different thickness, carrier concentration, interfacial layer (IL) defect tolerance factor, impact of temperature on device performance have been portrayed by SCAPS-1D simulator. A lower thickness of ETL and HTL is quite effective to produce better efficiency. The proposed FTO/WO3/CH3NH3SnI3/Mg-CuCrO2/Au device shows the maximum Voc, Jsc, FF and PCE of 1.02 V, 37.95 mA/cm2, 71.38 %, 27.53 %, respectively. The carrier concentrations NA and ND were optimized at 1x1014cm-3 and 1x1016cm-3. After those ideals, the projected PSC device’s photovoltaic presentation was considerably reduced. The interfacial layer 1 (IL1) and interfacial layer 2 (IL2) exhibited the defect tolerance level of 1x1011cm-2 and 1x1016cm-2, respectively. It was found that Au as a back-contact could produce the highest PCE among other back contact metals. The ambient temperature proved to be ideal one to generate the highest PCE since elevated temperatures lead to reduce Voc and PCE thereby. The suggested ETL and HTL have been proved to be alternative inorganic charge transporting materials which could regulate the device performance as well as stability into the environmental atmosphere.