Abstract
PbSe microcrystals are fabricated by the pulsed laser welding technique in Ar atmosphere within 2 min. The microcrystals showed cubic structural phases of PbSe in addition to tetragonal SeO2. PbSe microcrystals exhibited layered structure composed of 200 nm thick layers. Electrical characterization on these crystals (Ag/ PbSe/Ag) revealed tunneling type current-voltage characteristics. Large resistive response to an imposed ac signal in the microwave frequency domain has been shown. In addition, the cutoff frequency (fco) spectra dis-played fco value larger than 100 GHz nominating the devices for 6G technology applications. Moreover, in-vestigations on the current conduction mechanism have shown the preferred current conduction by quantum mechanical tunneling accompanied with correlated barrier hopping. On the other hand, measurements of the capacitance-voltage characteristics in the frequency domain of 1.0-100 MHz showed performance of the Ag/ PbSe/Ag structures as a metal -oxide-semiconductors (MOS) devices suitable for energy storage at ultrashort times.