Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells

Journal article

Peer reviewed

K. M. A. Saron, M. Ibrahim, M. R. Hashim, T. A. Taha, Nezar G. Elfadill, E. M. Mkawi and Nageh K. Allam

Applied physics letters, Vol.118(2), p.23902

11/01/2021

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Title: Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells
Creators - without role: K. M. A. Saron - Al Jouf University
M. Ibrahim - Physics Department, College of Science and Arts, Jouf University, P.O. Box 756, Al-Gurayyat, Saudi Arabia
M. R. Hashim - Universiti Sains Malaysia
T. A. Taha - Al Jouf University
Nezar G. Elfadill - National Energy Research Center—Solar Energy Institute, P.O. Box 4032 Khartoum, Sudan
E. M. Mkawi - King Abdulaziz University
Nageh K. Allam - American University in Cairo
Publication Details: Applied physics letters, Vol.118(2), p.23902
Identifiers: 9912555008331
Academic Unit: Al Jouf University; King Abdulaziz University
Language: English
Resource Type: Journal article