Abstract
RF magnetron sputtering technique was employed to deposit Li-doped ZnO thin films onto quartz substrate at different substrate temperatures ranging from room temperature (RT) to 500 . X-ray diffraction analysis revealed that the deposited films had a hexagonal-wurtzite crystal structure with preferred orientation along the c-axis. Increasing the substrate temperature improved the crystallinity and caused a significant increase in the crystallite size (182 nm) for the film deposited at 500 . The energy band gap of the films deposited at RT, 350, 400, 450 and 500 were found to be 3.292, 3.282, 3.281, 3.28 and 3.269 eV, respectively. All films exhibited a broad UV-violet emission band centered on 407 nm and attributed to the radiative recombination processes near the band edge. A Hall mobility of 33.3 /V s, concentration () of 7.6 and resistivity of 39.7 -cm were obtained for the film deposited at 500 . The results show that the substrate temperature plays a crucial role in the structural, morphological, optical and electrical properties.