Abstract
In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/AlxGa(1-x)N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schrodinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red- and blue-shifted through varying the left quantum well width and the aluminum concentration x(b2) of the central barrier, respectively. These structural parameters are found to present optimum values for carrying out the transition of 0.8 eV (1.55 mu m). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with AlyGa(1-y)N and by varying the aluminum concentration y(Al). The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 mu m). (C) 2015 AIP Publishing LLC.