Abstract
Abstract Present investigation has been started to perform the comparative study of pure and glycine doped KH 2 PO 4 (KDP) single crystals grown by most commercial slow solvent evaporation technique. The grown crystals were subjected to single crystal X-ray diffraction analysis to determine their structural parameters. The linear optical studies of pure and glycine doped KDP crystal have been undertaken within 200 nm to 1100 nm wavelength range by means of UV-Vis studies. The enhancement in second harmonic generation (SHG) efficiency of glycine doped KDP crystal has been determined using a standard Kurtz-Perry powder test. The dielectric measurements have been carried out to explore the impact of glycine dopant on dielectric constant and dielectric loss of KDP crystal. The surface growth habitat and etch pit density of glycine doped KDP crystal have been evaluated using the results of microscopic etching studies. In light of obtained results the suitability of glycine doped KDP crystal for device applications has been discussed.