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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon
Journal article   Open access  Peer reviewed

Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

Michael D. Thompson, Aiyeshah Alhodaib, Adam P. Craig, Alex Robson, Atif Aziz, Anthony Krier, Johannes Svensson, Lars-Erik Wernersson, Ana M. Sanchez and Andrew R. J. Marshall
Nano letters, Vol.16(1), pp.182-187
13/01/2016
DOI: https://doi.org/10.1021/acs.nanolett.5b03449
PMID: 26675242

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photo-detectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 mu m at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
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https://doi.org/10.1021/acs.nanolett.5b03449View
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